According to the latest information, DRAMs launching in the future may be made with hybrid bonding applied. This is because it will allow chipmakers to increase the density of the DRAM to increase their capacity, analyst Jeongdong Choe said during a seminar hosted by SEMI in Suwon, south of Seoul.
LPDDR5X and other latest memory chips only had a cell array efficiency of 50% at the current stage, Choe said.
If like NAND, chipmakers can make the DRAM array die and make the peripheral separately, this could maximize density, he said.
NAND chips already have the peripheral underneath the memory cell to increase their densities. Hybrid bonding refers to the bonding of a heterogeneous die and the wafer allowing improvements in I/O and circuit lengths.
Samsung, SK Hynix, and Intel are preparing to apply the process in their chip-making, according to analysts. Choe said in China, products that have the CMOS logic and DRAM die hybrid bonded have already been produced and launched in the market.